The research addresses the challenge of translating emerging materials, such as transition metal dichalcogenides (MoS₂, WS₂), into scalable technologies by developing metrological approaches that link material properties directly to synthesis and processing conditions. This includes the integration of multimodal characterisation techniques – such as Raman spectroscopy, photoluminescence, electron microscopy, AFM, and spectroscopic ellipsometry – to enable rapid, spatially resolved assessment of material quality, defectivity, and uniformity. Such approaches are critical to the performance of 2D materials is highly sensitive to growth conditions and processing-induced defects.

The research aims to establish data-driven, inline-compatible measurement strategies that provide real-time feedback during fabrication, enabling improved reproducibility and process control. By combining experimental metrology with digital and statistical analysis frameworks, the project contributes to the development of robust characterisation standards and scalable workflows for next-generation semiconductor materials, supporting their integration into industrial applications.